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Silicon nitride is a nonferrous alloy that is characterized by low thermal conductivity, excellent fracture toughness and chemical resistance. These properties make silicon nitride suitable for aerospace applications. However, it is a costly material. Therefore, manufacturers are interested in obtaining a high strength-to-weight ratio for their components.
Thermal expansion coefficients of silicon nitride thin films are measured using a double substrate technique. The coefficients are then expressed as a function of the inverse cube root of the amorphous Si volume fraction.
The linear thermal expansion coefficient of silicon nitride is 3.3 g 10 G 6 at 300 K and 6.5 g 10 G 6 at 1000 K. It is lower than the values found for other nitride compounds.
The thermal expansion coefficient is a useful property for materials scientists. It is also called biaxial Young’s modulus. Although the coefficient varies slightly, it is useful for the study of silicon nitride.
When silicon nitride thin films are deposited in a mixture of dichlorosilane and ammonia, the differential thermal stress is induced. This is a result of compositionally induced intrinsic strain in the film. In addition to the stress, there is a residual stress that is dependent on the substrate temperature.
In the case of amorphous Si, the volumetric dilation of the basal Si-SiyN4-y tetrahedra is consistent with substitution of Si for N. Moreover, the thermal Gr neisen parameter is larger in cubic silicon nitride.
The thermal expansion coefficient of silicon nitride ceramics is also reviewed. They are engineered to provide optimal performance in extreme conditions.
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